JPS6325859Y2 - - Google Patents
Info
- Publication number
- JPS6325859Y2 JPS6325859Y2 JP13884581U JP13884581U JPS6325859Y2 JP S6325859 Y2 JPS6325859 Y2 JP S6325859Y2 JP 13884581 U JP13884581 U JP 13884581U JP 13884581 U JP13884581 U JP 13884581U JP S6325859 Y2 JPS6325859 Y2 JP S6325859Y2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- current
- gto1
- circuit
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 101100449816 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GTO1 gene Proteins 0.000 description 30
- 239000003990 capacitor Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006698 induction Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Protection Of Static Devices (AREA)
- Power Conversion In General (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13884581U JPS5843188U (ja) | 1981-09-18 | 1981-09-18 | 自己消弧形スイツチング素子の保護回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13884581U JPS5843188U (ja) | 1981-09-18 | 1981-09-18 | 自己消弧形スイツチング素子の保護回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5843188U JPS5843188U (ja) | 1983-03-23 |
| JPS6325859Y2 true JPS6325859Y2 (en]) | 1988-07-14 |
Family
ID=29932055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13884581U Granted JPS5843188U (ja) | 1981-09-18 | 1981-09-18 | 自己消弧形スイツチング素子の保護回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5843188U (en]) |
-
1981
- 1981-09-18 JP JP13884581U patent/JPS5843188U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5843188U (ja) | 1983-03-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4366522A (en) | Self-snubbing bipolar/field effect (biofet) switching circuits and method | |
| US4816984A (en) | Bridge arm with transistors and recovery diodes | |
| DE19628131A1 (de) | Gatespannungsbegrenzung für eine Schaltungsanordnung | |
| US6046516A (en) | Electronic switch for use with inductive loads | |
| JPH0653795A (ja) | 半導体装置 | |
| US6856520B2 (en) | Double sided IGBT phase leg architecture and clocking method for reduced turn on loss | |
| JPS6121015B2 (en]) | ||
| EP0172338B1 (en) | Gate turn-off thyristor | |
| JPS6325859Y2 (en]) | ||
| US4110638A (en) | Configuration for reducing the turn-off time of a thyristor | |
| Knöll | High-current transistor choppers | |
| US4739199A (en) | High switching speed semiconductor device | |
| KR890004975B1 (ko) | Gto 사이리스터의 스너버회로 | |
| JP2003289660A (ja) | 制御極付半導体スイッチの直列回路 | |
| JPS60107917A (ja) | 複合形半導体スイッチ | |
| EP0920114A1 (en) | Power converter wherein mos gate semiconductor device is used | |
| JPH0134524Y2 (en]) | ||
| EP0243844A2 (en) | Method and circuit for gated turn-off of a thyristor | |
| JPH035151B2 (en]) | ||
| JPS623943Y2 (en]) | ||
| JPH0257376B2 (en]) | ||
| JPS5858900B2 (ja) | ゲ−トタ−ンオフサイリスタのゲ−ト回路 | |
| JPH0685496B2 (ja) | 静電誘導形自己消弧素子のゲート駆動回路 | |
| JPS646625B2 (en]) | ||
| JPS60213272A (ja) | ゲ−トタ−ンオフサイリスタを適用したインバ−タの保護装置 |